CPC H01L 27/0924 (2013.01) [H01L 21/823412 (2013.01); H01L 21/823431 (2013.01); H01L 21/823468 (2013.01); H01L 29/6656 (2013.01); H01L 29/6681 (2013.01); H01L 29/7851 (2013.01)] | 20 Claims |
1. A method comprising:
forming a dummy gate over a channel region of a fin;
forming gate spacers adjacent the dummy gate;
recessing the dummy gate to expose sidewalls of the gate spacers;
performing a spacer treatment process, the spacer treatment process bowing the sidewalls of the gate spacers inwardly towards one another in a top-down view such that a distance between the sidewalls of the gate spacers is decreased by the spacer treatment process;
removing remaining portions of the dummy gate to expose the channel region; and
forming a gate dielectric on the channel region and the sidewalls of the gate spacers.
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