US 11,862,635 B2
Neighboring gate-all-around integrated circuit structures having disjoined epitaxial source or drain regions
Leonard P. Guler, Hillsboro, OR (US); Biswajeet Guha, Hillsboro, OR (US); Tahir Ghani, Portland, OR (US); and Swaminathan Sivakumar, Beaverton, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Jun. 22, 2022, as Appl. No. 17/846,439.
Application 17/846,439 is a division of application No. 16/134,719, filed on Sep. 18, 2018, granted, now 11,398,474.
Prior Publication US 2022/0320085 A1, Oct. 6, 2022
Int. Cl. H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 27/0886 (2013.01) [H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823468 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/42356 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/7851 (2013.01); H01L 2029/7858 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of fabricating an integrated circuit structure, the method comprising:
forming a first vertical arrangement of nanowires and a second vertical arrangement of nanowires above a substrate, the nanowires of the second vertical arrangement of nanowires having a horizontal width greater than a horizontal width of the nanowires of the first vertical arrangement of nanowires;
forming first epitaxial source or drain structures at ends of the first vertical arrangement of nanowires, and forming second epitaxial source or drain structures at ends of the second vertical arrangement of nanowires, ones of the second epitaxial source or drain structures and corresponding ones of the first epitaxial source or drain structures having a laterally merged region there between;
removing the laterally merged region to disjoin the ones of the second epitaxial source or drain structures and the corresponding ones of the first epitaxial source or drain structures; and
forming an intervening dielectric structure between the ones of the second epitaxial source or drain structures and the corresponding ones of the first epitaxial source or drain structures.