US 11,862,631 B2
Radiation resistant circuit device, pressure transmission device, and nuclear power plant measurement system
Ryo Kuwana, Tokyo (JP); Masahiro Masunaga, Tokyo (JP); Mutsumi Suzuki, Tokyo (JP); and Isao Hara, Tokyo (JP)
Assigned to Hitachi, Ltd., Tokyo (JP)
Filed by Hitachi, Ltd., Tokyo (JP)
Filed on Jul. 23, 2020, as Appl. No. 16/937,061.
Claims priority of application No. 2019-148311 (JP), filed on Aug. 13, 2019.
Prior Publication US 2021/0050348 A1, Feb. 18, 2021
Int. Cl. H01L 27/088 (2006.01); G01L 9/00 (2006.01); G21C 17/00 (2006.01); H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 29/16 (2006.01)
CPC H01L 27/088 (2013.01) [G01L 9/0042 (2013.01); G21C 17/00 (2013.01); H01L 23/49838 (2013.01); H01L 24/48 (2013.01); H01L 29/1608 (2013.01); H01L 2224/48227 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/1424 (2013.01)] 28 Claims
OG exemplary drawing
 
1. A radiation resistant circuit device, comprising:
a SiC semiconductor element equipped with a SiC integrated circuit;
a printed board on which the SiC semiconductor element is provided;
a conductive wiring and a covering material that are arranged inside the printed board, the conductive wiring having a predetermined surface facing a bottom surface of a substrate electrode of the SiC integrated circuit; and
an insulating material arranged between the bottom surface of the substrate electrode of the SiC integrated circuit and the predetermined surface of the conductive wiring;
wherein a parasitic capacitance is formed via the insulating material and the covering material between the bottom surface of the substrate electrode of the SiC integrated circuit and the conductive wiring.