US 11,862,616 B2
Multi wavelength light emitting device and method of fabricating the same
Chung Hoon Lee, Gyeonggi-do (KR); Dae Sung Cho, Gyeonggi-do (KR); and So Ra Lee, Gyeonggi-do (KR)
Assigned to Seoul Viosys Co., Ltd., Gyeonggi-do (KR)
Filed by SEOUL VIOSYS CO., LTD., Gyeonggi-do (KR)
Filed on Feb. 18, 2021, as Appl. No. 17/178,897.
Claims priority of provisional application 63/074,542, filed on Sep. 4, 2020.
Claims priority of provisional application 62/981,795, filed on Feb. 26, 2020.
Prior Publication US 2021/0265326 A1, Aug. 26, 2021
Int. Cl. H01L 25/075 (2006.01); H01L 33/62 (2010.01); H01L 33/00 (2010.01); H01L 33/38 (2010.01); H01L 33/32 (2010.01); H01L 23/00 (2006.01)
CPC H01L 25/0756 (2013.01) [H01L 25/0753 (2013.01); H01L 33/0093 (2020.05); H01L 33/382 (2013.01); H01L 33/62 (2013.01); H01L 24/32 (2013.01); H01L 33/32 (2013.01); H01L 2224/32145 (2013.01); H01L 2924/12041 (2013.01); H01L 2933/0016 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A light emitting device, comprising:
a short wavelength light emitting region;
a long wavelength light emitting region; and
a transparent electrode layer combining the short wavelength emitting region and the long wavelength light emitting region, wherein:
the short wavelength light emitting region includes a first structure of a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer,
the long wavelength light emitting region includes a second structure of a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer,
the transparent electrode layer is in contact with a semiconductor layer of at least one of the short wavelength light emitting region or the long wavelength light emitting region,
the active layer of the long wavelength light emitting region contains more Indium (In) than the active layer of the short wavelength light emitting region, and
the short wavelength light emitting region emits light of a shorter wavelength than that of light emitted from the long wavelength light emitting region;
wherein the light emitting device includes no phosphor.