US 11,862,567 B2
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
John Bruley, Poughkeepsie, NY (US); Jack O. Chu, Manhasset Hills, NY (US); Kam-Leung Lee, Putnam Valley, NY (US); Ahmet S. Ozcan, San Jose, CA (US); Paul M. Solomon, Yorktown Heights, NY (US); and Jeng-bang Yau, Yorktown Heights, NY (US)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Mar. 9, 2021, as Appl. No. 17/196,267.
Application 16/168,092 is a division of application No. 15/257,267, filed on Sep. 6, 2016, granted, now 10,269,714, issued on Apr. 23, 2019.
Application 17/196,267 is a continuation of application No. 16/168,092, filed on Oct. 23, 2018, granted, now 10,985,105.
Prior Publication US 2021/0193576 A1, Jun. 24, 2021
Int. Cl. H01L 23/535 (2006.01); H01L 23/532 (2006.01); H01L 29/78 (2006.01); H01L 21/768 (2006.01); C22C 30/00 (2006.01); H01L 23/485 (2006.01); H01L 21/285 (2006.01)
CPC H01L 23/535 (2013.01) [C22C 30/00 (2013.01); H01L 21/2855 (2013.01); H01L 21/28518 (2013.01); H01L 21/76805 (2013.01); H01L 21/76843 (2013.01); H01L 21/76846 (2013.01); H01L 21/76858 (2013.01); H01L 21/76864 (2013.01); H01L 21/76895 (2013.01); H01L 23/485 (2013.01); H01L 23/53223 (2013.01); H01L 23/53266 (2013.01); H01L 29/7851 (2013.01); H01L 23/53209 (2013.01); H01L 23/53238 (2013.01); H01L 23/53252 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a contact to a semiconductor device comprising:
forming a nickel platinum semiconductor alloy on a silicon contact;
depositing a titanium layer having an angstrom scale thickness in contact with the nickel platinum semiconductor alloy;
forming an aluminum containing fill on the titanium layer;
forming a metal nitride layer and metal containing contact to complete a material stack beginning with the nickel platinum semiconductor alloy; and
applying anneal after at least said depositing the titanium layer to the material stack to provide a contact alloy comprising nickel, platinum, aluminum, titanium and a semiconductor element from the contact surface of the semiconductor device, the contact alloy comprising nickel (Ni) ranging from 20 at. % to 30 at. %, platinum (Pt) ranging from 0 at. % to 10 at. %, aluminum (Al) ranging from 40 at. % to 60 at. %, and silicon (Si) ranging from 5 at. % to 20 at. %.