US 11,862,565 B2
Contact structures for three-dimensional memory
Zhongwang Sun, Hubei (CN); Zhong Zhang, Hubei (CN); Wenxi Zhou, Hubei (CN); Lei Liu, Hubei (CN); and Zhiliang Xia, Hubei (CN)
Assigned to Yangtze Memory Technologies Co., Ltd., Hubei (CN)
Filed by Yangtze Memory Technologies Co., Ltd., Hubei (CN)
Filed on May 15, 2020, as Appl. No. 16/875,180.
Application 16/875,180 is a continuation of application No. PCT/CN2020/079087, filed on Mar. 13, 2020.
Prior Publication US 2021/0287991 A1, Sep. 16, 2021
Int. Cl. H01L 23/535 (2006.01); H01L 21/321 (2006.01); H01L 21/768 (2006.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01)
CPC H01L 23/535 (2013.01) [H01L 21/3212 (2013.01); H01L 21/7684 (2013.01); H01L 21/76805 (2013.01); H01L 21/76843 (2013.01); H01L 21/76895 (2013.01); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02)] 5 Claims
OG exemplary drawing
 
1. A three-dimensional (3D) memory structure, comprising:
a film stack comprising conductive and dielectric layers alternatingly stacked on top of each other in a first direction;
a common source contact penetrating the film stack in the first direction;
memory strings in a channel structure region penetrating through the film stack in the first direction, wherein each of the memory strings comprises a memory film and a channel layer;
contact structures in the channel structure region penetrating through one or more of the conductive and dielectric layers in the first direction such that a respective conductive layer of the film stack is electrically connected to at least one of the contact structures; and
dummy memory strings adjacent to the contact structures and penetrating through the film stack in the first direction, each of the dummy memory strings comprising a core filling film, wherein:
each of the contact structures comprises a liner surrounding a conductive material;
the conductive material contacts the respective conductive layer of the film stack;
the liner comprises an insulator configured to electrically isolate the contact structures from one or more conductive layers of the film stack in a second direction perpendicular to the first direction and is distant from the respective conductive layer of the film stack in the first direction;
at least one memory string is directly adjacent to two contact structures that are on opposite sides of the at least one memory string in the second direction; and
the common source contact comprises an isolation liner configured to electrically isolate the common source contact from the conductive layers of the film stack.