US 11,862,554 B2
Apparatuses and methods of controlling hydrogen supply in memory device
Shigeru Sugioka, Hiroshima (JP); and Keizo Kawakita, Hiroshima (JP)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jul. 2, 2021, as Appl. No. 17/366,972.
Prior Publication US 2023/0005837 A1, Jan. 5, 2023
Int. Cl. H01L 23/522 (2006.01); H10B 12/00 (2023.01)
CPC H01L 23/5223 (2013.01) [H10B 12/0335 (2023.02); H10B 12/315 (2023.02); H10B 12/50 (2023.02)] 22 Claims
OG exemplary drawing
 
1. An apparatus, comprising:
a first capacitor disposed above a substrate in a front-end-of-line (FEOL) in a memory cell region, the first capacitor being a metal-insulator-metal (MIM) memory cell capacitor;
a second capacitor in or above a back-end-of line (BEOL) in a peripheral region, the second capacitor being a MIM compensation capacitor;
a hydrogen supply film in the BEOL and above the first capacitor, the hydrogen supply film configured to provide at least one of hydrogen and hydrogen ions; and
a hydrogen barrier film in the BEOL and above the hydrogen supply film, the hydrogen barrier film configured to be hydrogen-impermeable between the hydrogen supply film and the second capacitor and prevent the hydrogen and/or hydrogen ions from reaching the second capacitor.