US 11,862,547 B2
Differential crosstalk self-cancelation in stackable structures
Zhichao Zhang, Chandler, AZ (US); Zhe Chen, Chandler, AZ (US); Srikant Nekkanty, Chandler, AZ (US); and Sriram Srinivasan, Chandler, AZ (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Feb. 28, 2020, as Appl. No. 16/804,516.
Prior Publication US 2021/0272892 A1, Sep. 2, 2021
Int. Cl. H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 23/58 (2006.01)
CPC H01L 23/49838 (2013.01) [H01L 23/49811 (2013.01); H01L 23/49827 (2013.01); H01L 23/49833 (2013.01); H01L 23/58 (2013.01)] 25 Claims
OG exemplary drawing
 
1. An assembly, comprising:
a substrate having a first interconnect and a second interconnect, wherein the first interconnect has a first conductive pad and a second conductive pad, and wherein the second interconnect has a third conductive pad and a fourth conductive pad; and
a socket over the substrate, wherein the socket has a first pin, a second pin, and a base layer, wherein the base layer includes a first pad and a second pad, wherein the first pin is vertically over the first interconnect, wherein the second pin is vertically over the second interconnect, wherein the first pad is directly coupled to the first pin and the fourth conductive pad of the second interconnect, and wherein the second pad is directly coupled to the second pin and the second conductive pad of the first interconnect.