US 11,862,511 B2
Field-effect transistors with a crystalline body embedded in a trench isolation region
Steven M. Shank, Jericho, VT (US); Siva P. Adusumilli, South Burlington, VT (US); and Alvin Joseph, Williston, VT (US)
Assigned to GlobalFoundries U.S. Inc., Malta, NY (US)
Filed by GlobalFoundries U.S. Inc., Malta, NY (US)
Filed on Nov. 16, 2021, as Appl. No. 17/527,716.
Prior Publication US 2023/0154786 A1, May 18, 2023
Int. Cl. H01L 21/762 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/76297 (2013.01) [H01L 21/02595 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
a semiconductor substrate including a device layer, a buried insulator layer, a handle substrate separated from the device layer by the buried insulator layer, and a first trench that penetrates through the device layer and the buried insulator layer into the handle substrate;
a trench isolation region positioned in the first trench, the trench isolation region comprising a dielectric material, the trench isolation region including a second trench surrounded by the dielectric material, and the trench isolation region including a plurality of openings that penetrate through the dielectric material to the handle substrate; and
a semiconductor layer positioned in the second trench of the trench isolation region, the semiconductor layer comprising a single-crystal semiconductor material.