US 11,862,470 B2
Silica particle and production method therefor, silica sol, polishing composition, polishing method, method for producing semiconductor wafer and method for producing semiconductor device
Tomohiro Kyotani, Tokyo (JP); Eiji Dejima, Tokyo (JP); Naoko Sumitani, Tokyo (JP); Tomohiro Kato, Tokyo (JP); and Takeshi Sawai, Tokyo (JP)
Assigned to Mitsubishi Chemical Corporation, Tokyo (JP)
Filed by Mitsubishi Chemical Corporation, Tokyo (JP)
Filed on Aug. 13, 2021, as Appl. No. 17/402,013.
Application 17/402,013 is a continuation of application No. PCT/JP2020/006619, filed on Feb. 19, 2020.
Claims priority of application No. 2019-029142 (JP), filed on Feb. 21, 2019; and application No. 2019-029143 (JP), filed on Feb. 21, 2019.
Prior Publication US 2021/0375631 A1, Dec. 2, 2021
Int. Cl. C09G 1/02 (2006.01); H01L 21/304 (2006.01); H01L 21/306 (2006.01); B24B 37/04 (2012.01); C01B 33/14 (2006.01)
CPC H01L 21/30625 (2013.01) [B24B 37/042 (2013.01); C01B 33/14 (2013.01); C01P 2004/64 (2013.01)] 16 Claims
 
1. A silica particle which satisfies the following formula (1):
y≥4.2  (1)
where a d value measured by wide-angle X-ray scattering is y Å.