CPC H01L 21/0262 (2013.01) [C23C 16/24 (2013.01); C23C 16/45593 (2013.01); C23C 16/52 (2013.01); H01L 21/02532 (2013.01); H01L 21/67017 (2013.01)] | 11 Claims |
1. A process for the continuous vapor deposition of silicon on substrates, comprising the following steps:
(a) introducing at least one substrate into a reaction chamber;
(b) introducing a process gas and also at least one gaseous silicon precursor compound into the reaction chamber;
(c) forming a gaseous mixture of at least one silicon-based intermediate in coexistence with the gaseous silicon precursor compound and the process gas in the reaction chamber;
(d) forming a silicon layer by vapor deposition of silicon from at least one of the gaseous silicon precursor compound or from the silicon-based intermediate on the substrate;
(e) discharging an excess of the gaseous mixture from the reaction chamber into a circulation conduit; and
(f) recirculating at least one constituent of the excess of the gaseous mixture selected from at least one of the silicon precursor compound, the silicon-based intermediate, or the process gas through the circulation conduit and into the reaction chamber;
wherein regulation and introduction of the gaseous silicon precursor compound from the circulation conduit and into the reaction chamber is controlled such that a molar ratio of the silicon-based intermediate to the silicon precursor compound has a value of from 0.2:0.8 to 0.5:0.5, and the corresponding molar ratio of the silicon-based intermediate product to the silicon precursor compound is adjusted within a gas stream flowing from the circulation conduit into the reaction chamber.
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