US 11,862,457 B2
Wafer cleaning apparatus, method for cleaning wafer and method for fabricating semiconductor device
SeongKeun Cho, Suwon-si (KR); Young Hoo Kim, Yongin-si (KR); Seung Min Shin, Suwon-si (KR); Tae Min Earmme, Hwaseong-si (KR); Kun Tack Lee, Suwon-si (KR); Hun Jae Jang, Suwon-si (KR); and Eun Hee Jeang, Paju-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jan. 18, 2023, as Appl. No. 18/098,330.
Application 18/098,330 is a division of application No. 17/478,619, filed on Sep. 17, 2021, granted, now 11,581,182.
Claims priority of application No. 10-2021-0020478 (KR), filed on Feb. 16, 2021.
Prior Publication US 2023/0154743 A1, May 18, 2023
Int. Cl. H01L 21/02 (2006.01); B08B 3/08 (2006.01); H01L 21/428 (2006.01); H01L 21/687 (2006.01)
CPC H01L 21/02057 (2013.01) [B08B 3/08 (2013.01); H01L 21/428 (2013.01); H01L 21/68764 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method of fabricating a semiconductor device, the method comprising:
disposing a wafer on a rotatable chuck;
irradiating a lower surface of the wafer with a laser to heat the wafer; and
supplying a chemical to an upper surface of the wafer to clean the wafer,
wherein the laser penetrates an optical system including an aspheric lens array,
wherein the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window,
wherein the first coating layer and the second coating layer have different light transmissivities from each other,
wherein the first coating layer surrounds the second coating layer, and
wherein a first light transmissivity of the first coating layer is smaller than a second light transmissivity of the second coating layer.