US 11,862,454 B2
Semiconductor device and display device including the same
Shunpei Yamazaki, Tokyo (JP); Junichi Koezuka, Tochigi (JP); Kenichi Okazaki, Tochigi (JP); and Masami Jintyou, Tochigi (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Jul. 16, 2021, as Appl. No. 17/377,674.
Application 15/606,044 is a division of application No. 14/921,141, filed on Oct. 23, 2015, granted, now 9,704,704, issued on Jul. 11, 2017.
Application 17/377,674 is a continuation of application No. 16/732,425, filed on Jan. 2, 2020, granted, now 11,158,745.
Application 16/732,425 is a continuation of application No. 15/606,044, filed on May 26, 2017, granted, now 10,529,864, issued on Jan. 7, 2020.
Claims priority of application No. 2014-218938 (JP), filed on Oct. 28, 2014.
Prior Publication US 2021/0343870 A1, Nov. 4, 2021
Int. Cl. H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 21/425 (2006.01); H01L 29/49 (2006.01); H01L 27/12 (2006.01); H01L 21/473 (2006.01); H01L 21/768 (2006.01)
CPC H01L 29/7869 (2013.01) [H01L 21/0234 (2013.01); H01L 21/0262 (2013.01); H01L 21/02323 (2013.01); H01L 21/02337 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 21/425 (2013.01); H01L 27/1225 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01); H01L 29/4908 (2013.01); H01L 29/66742 (2013.01); H01L 29/66969 (2013.01); H01L 29/78696 (2013.01); H01L 21/473 (2013.01); H01L 21/76826 (2013.01); H01L 21/76832 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an oxide semiconductor film;
a source electrode electrically connected to the oxide semiconductor film;
a drain electrode electrically connected to the oxide semiconductor film;
an insulating film over the oxide semiconductor film, the source electrode, and the drain electrode;
a first metal oxide film over the insulating film; and
a second metal oxide film over the first metal oxide film,
wherein the first metal oxide film comprises at least one metal element included in the oxide semiconductor film,
wherein a mixed region exists between the first metal oxide film and the second metal oxide film,
wherein the mixed region comprises an element included in the first metal oxide film and an element included in the second metal oxide film,
wherein the first metal oxide film comprises In, and
wherein the second metal oxide film comprises Al.