| CPC H01J 37/32935 (2013.01) [H01J 37/32449 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01J 2237/334 (2013.01)] | 18 Claims |
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1. A plasma processing method comprising:
(a) providing a plasma processing system including:
a plurality of plasma processing apparatuses,
at least one of the plurality of plasma processes apparatuses including:
a chamber, the chamber including a substrate support and a plasma generator facing the substrate support, and wherein a substrate having a recess is positioned on the substrate support in the chamber
a first sensor for monitoring a state of plasma generated in the chamber, and
a controller;
an observation device including a second sensor provided outside the at least one of the plurality of plasma processing apparatuses,
(b) detecting a pattern shape on the substrate using the second sensor;
(c) generating plasma in the chamber under a first processing condition determined based on the results of (b), thereby forming a film on the recess, the film being formed on an upper side of a side wall of the recess and on a top surface outside of the recess and adjacent the recess, and not being formed on a lower side of the side wall and a bottom of the recess;
(d) monitoring a state of the plasma generated in (c) using the first sensor;
(e) determining, based on the state of the plasma monitored in (d), a necessity of re-execution of (c), and a second processing condition for the re-execution of of (c);
(f) detecting, using the second sensor, a pattern shape of the substrate on which the film is formed when it is determined in (e) that (c) is not to be re-executed;
(g) etching a base layer under a third processing condition determined based on the results of (f), the etching of the base layer including using a layer having the film formed thereon as a mask;
wherein (c) includes:
(c-1) introducing a first gas into the chamber and causing the first gas to be adsorbed on the recess,
(c-2) purging an inside of the chamber,
(c-3) introducing a second gas into the chamber to generate the plasma from the second gas and reacting a component of the second gas with a component of the first gas adsorbed on the recess, thereby forming the film,
(c-4) purging the inside of the chamber, and
(c-5) repeating (c-1), (c-2), (c-3), and (c-4) in a cycle, and
wherein:
at least one of: (1) in (c-1), the gas is adsorbed on only a part of the recess, and/or (2) in (c-3), (c-3) is ended before a reaction between the component of the first gas and the component of the second gas is saturated over an entire surface of the recess,
in (c), the film is formed on the side wall such that a thickness of the film gradually decreases from the upper side of the side wall toward a bottom of the recess,
(d) includes monitoring the state of the plasma in each of a plurality of regions where the substrate is disposed,
in (e), (c) is determined to be re-executed when an integral value of a physical quantity obtained in (d) that is indicative of the state of the plasma in each of the plurality of regions is less than a predetermined value, the physical quantity including at least one parameter selected from a parameter group consisting of an electron density, an ion density, a molecular radical density, and an atomic molecular ion mass,
(e) is performed before (c-4), after (c-4), or in parallel with (c-4), and
(g) is performed in a different plasma processing apparatus than (c), and
wherein:
the first processing condition includes at least one selected from a parameter group consisting of a temperature of a stage on which the substrate is disposed, a pressure of the chamber, an introduction flow rate of the first gas, an introduction time of the first gas, and a processing time,
the second processing condition includes at least one of a processing time for re-executing (c-1), a processing time for re-executing (c-3), re-executing (c) starting from (c-1), and re-executing (c) starting from (c-3),
the third processing condition includes at least one of an introduction amount of an etching gas, a radio-frequency power, and a substrate temperature.
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