US 11,862,432 B2
Microwave heating device
Hiroshi Suenobu, Tokyo (JP); Shingo Yamaura, Tokyo (JP); Tai Tanaka, Tokyo (JP); and Michio Takikawa, Tokyo (JP)
Assigned to MITSUBISHI ELECTRIC CORPORATION, Tokyo (JP)
Appl. No. 17/251,449
Filed by MITSUBISHI ELECTRIC CORPORATION, Tokyo (JP)
PCT Filed Jul. 2, 2018, PCT No. PCT/JP2018/025058
§ 371(c)(1), (2) Date Dec. 11, 2020,
PCT Pub. No. WO2020/008497, PCT Pub. Date Jan. 9, 2020.
Prior Publication US 2021/0249229 A1, Aug. 12, 2021
Int. Cl. H05B 6/70 (2006.01); H05B 6/80 (2006.01); H01J 37/32 (2006.01)
CPC H01J 37/32201 (2013.01) [H01J 37/32311 (2013.01); H01J 37/32926 (2013.01); H05B 6/70 (2013.01); H05B 6/806 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A microwave heating device, comprising:
a heating chamber capable of storing therein a heating target and having walls each made of a conductor;
a microwave generator to generate a microwave;
at least one radiation element to radiate, into the heating chamber, the microwave generated by the microwave generator, the radiation element being provided at one of the walls;
at least one hollow dielectric member in which a gas is sealed, the hollow dielectric member having electrodes at both end portions thereof; and
processing circuitry to control a state of the hollow dielectric member; and to adjust a current to be applied to the electrodes of the hollow dielectric member, the processing circuitry being connected to the electrodes;
wherein the at least one hollow dielectric member is provided along one of the walls which is other than the wall at which the radiation element is provided; and
wherein the processing circuitry controls the state of the hollow dielectric member so that the hollow dielectric member is put into one of states of: a plasma state in which the microwave is reflected by the gas; a plasma state in which the microwave is absorbed by the gas; and a gas state in which the microwave is allowed to be transmitted through the gas.