CPC H01F 10/329 (2013.01) [G11C 11/161 (2013.01); H01F 10/3259 (2013.01); H01F 10/3286 (2013.01); H01F 41/32 (2013.01); H10B 61/22 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] | 19 Claims |
1. A memory stack, comprising:
a spin-orbit torque layer;
a magnetic bias layer disposed below the spin-orbit torque layer and having a first magnetic anisotropy; and
a free layer disposed above the spin-orbit torque layer and having a second magnetic anisotropy perpendicular to the first magnetic anisotropy,
wherein a width of the magnetic bias layer is different from a width of the free layer.
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