US 11,862,261 B2
Method of writing data in nonvolatile memory device, nonvolatile memory device performing the same and method of operating memory system using the same
Kwangwoo Lee, Seoul (KR); Chanha Kim, Hwaseong-si (KR); and Heewon Lee, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Aug. 4, 2021, as Appl. No. 17/393,797.
Claims priority of application No. 10-2020-0163790 (KR), filed on Nov. 30, 2020.
Prior Publication US 2022/0172794 A1, Jun. 2, 2022
Int. Cl. G11C 16/34 (2006.01); G11C 16/26 (2006.01); G11C 16/10 (2006.01)
CPC G11C 16/3495 (2013.01) [G11C 16/102 (2013.01); G11C 16/26 (2013.01); G11C 16/3404 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of writing data in a nonvolatile memory device, the method comprising:
receiving a write command, a write address and write data to be programmed;
receiving offset information representing a verification level, the receiving the offset information including,
checking an input/output (I/O) pattern of the write data and determining whether the write data corresponds to a distribution deterioration pattern based on results of the checking the I/O pattern of the write data,
in response to the write data not corresponding to the distribution deterioration pattern, not receiving the offset information, and
in response to the offset information not being received, programming the write data such that all of a plurality of states are maintained, the plurality of states corresponding to a distribution of threshold voltages of memory cells; and
in response to the offset information being received, programming the write data based on the offset information such that at least one state among the plurality of states included in the distribution of threshold voltages of memory cells in which the write data is stored is changed.