US 11,862,260 B2
Audit techniques for read disturb detection in an open memory block
Jiacen Guo, Sunnyvale, CA (US); and Swaroop Kaza, San Jose, CA (US)
Assigned to SANDISK TECHNOLOGIES LLC, Addison, TX (US)
Filed by SanDisk Technologies LLC, Addison, TX (US)
Filed on Feb. 14, 2022, as Appl. No. 17/671,015.
Prior Publication US 2023/0260584 A1, Aug. 17, 2023
Int. Cl. G11C 16/34 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/16 (2006.01); H10B 43/27 (2023.01)
CPC G11C 16/349 (2013.01) [G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/16 (2013.01); G11C 16/3422 (2013.01); H10B 43/27 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method for detecting read disturb in an open memory block comprising one or more wordlines containing data and one or more erased wordlines, the method comprising:
applying a pass-through voltage to each wordline that contains data in the open memory block;
applying an audit verify voltage to each erased wordline in the open memory block;
determining a bit count indicative of a read disturb level of the one or more erased wordlines;
determining whether the bit count exceeds a threshold value; and
determining whether to continue operation of the open memory block based at least in part on whether the bit count exceeds the threshold value.