CPC G11C 16/349 (2013.01) [G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/16 (2013.01); G11C 16/3422 (2013.01); H10B 43/27 (2023.02)] | 20 Claims |
1. A method for detecting read disturb in an open memory block comprising one or more wordlines containing data and one or more erased wordlines, the method comprising:
applying a pass-through voltage to each wordline that contains data in the open memory block;
applying an audit verify voltage to each erased wordline in the open memory block;
determining a bit count indicative of a read disturb level of the one or more erased wordlines;
determining whether the bit count exceeds a threshold value; and
determining whether to continue operation of the open memory block based at least in part on whether the bit count exceeds the threshold value.
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