US 11,862,249 B2
Non-volatile memory with staggered ramp down at the end of pre-charging
Xiang Yang, Santa Clara, CA (US); Fanqi Wu, Sunnyvale, CA (US); Jiacen Guo, Sunnyvale, CA (US); and Jiahui Yuan, Fremont, CA (US)
Assigned to SanDisk Technologies LLC, Addison, TX (US)
Filed by SANDISK TECHNOLOGIES LLC, Addison, TX (US)
Filed on Nov. 16, 2021, as Appl. No. 17/527,747.
Prior Publication US 2023/0154538 A1, May 18, 2023
Int. Cl. G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/08 (2006.01); G11C 16/34 (2006.01); G11C 16/24 (2006.01); H10B 43/27 (2023.01); G11C 11/56 (2006.01); H01L 25/065 (2023.01); H10B 43/10 (2023.01)
CPC G11C 16/10 (2013.01) [G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01); G11C 16/3427 (2013.01); H10B 43/27 (2023.02); G11C 11/5671 (2013.01); H01L 25/0657 (2013.01); H01L 2225/06562 (2013.01); H10B 43/10 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A non-volatile storage apparatus, comprising:
a group of connected non-volatile memory cells;
control lines connected to the group of connected non-volatile memory cells, the control lines comprise data word lines and select lines, the data word lines include an edge word line, the edge word line is the last data word line at an end of the data word lines, the control lines include a first control line next to the edge word line and a second control line next to the first control line, the first control line and the second control line are not data word lines; and
a control circuit connected to the control lines, the control circuit is configured to pre-charge a channel of the group of connected non-volatile memory cells by applying voltages to the control lines, the control circuit is configured to ramp down the voltages applied to the control lines for the pre-charging including ramping down the first control line prior to ramping down the second control line.