US 11,861,237 B2
Storage device accessible on a cell-by-cell basis and method of operating the same
Doo Hyun Kim, Hwaseong-si (KR); and Jong-Hoon Lee, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on May 31, 2022, as Appl. No. 17/828,362.
Application 17/828,362 is a continuation of application No. 16/988,909, filed on Aug. 10, 2020, granted, now 11,347,436.
Claims priority of application No. 10-2019-0174861 (KR), filed on Dec. 26, 2019.
Prior Publication US 2022/0291872 A1, Sep. 15, 2022
Int. Cl. G06F 3/00 (2006.01); G06F 3/06 (2006.01); G11C 16/34 (2006.01); G11C 16/14 (2006.01); G11C 16/10 (2006.01); G06F 7/544 (2006.01); G06N 3/04 (2023.01); G11C 16/26 (2006.01); G11C 16/04 (2006.01)
CPC G06F 3/0659 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0679 (2013.01); G06F 7/5443 (2013.01); G06N 3/04 (2013.01); G11C 16/10 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); G11C 16/349 (2013.01); G11C 16/0483 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A storage device comprising:
a nonvolatile memory device comprising a memory cell array, the memory cell array including main memory cells and flag cells, each main memory cell includes one or more data sets; and
a storage controller configured to access the nonvolatile memory device,
wherein the storage controller is configured to perform a write operation that overwrites one of the data sets stored in a main memory cell among the main memory cells in a first state by adjusting a first value of the main memory cell to a second other value to set the main memory cell to a second state and a read operation on the main memory cell using a threshold voltage range of the second state.