CPC G06F 3/0659 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0679 (2013.01); G06F 7/5443 (2013.01); G06N 3/04 (2013.01); G11C 16/10 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); G11C 16/349 (2013.01); G11C 16/0483 (2013.01)] | 20 Claims |
1. A storage device comprising:
a nonvolatile memory device comprising a memory cell array, the memory cell array including main memory cells and flag cells, each main memory cell includes one or more data sets; and
a storage controller configured to access the nonvolatile memory device,
wherein the storage controller is configured to perform a write operation that overwrites one of the data sets stored in a main memory cell among the main memory cells in a first state by adjusting a first value of the main memory cell to a second other value to set the main memory cell to a second state and a read operation on the main memory cell using a threshold voltage range of the second state.
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