US 11,861,192 B2
Storage controller redirecting write operation and operating method thereof
Minji Kim, Suwon-si (KR); and Sangwon Jung, Busan (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Nov. 15, 2021, as Appl. No. 17/526,243.
Claims priority of application No. 10-2021-0027516 (KR), filed on Mar. 2, 2021.
Prior Publication US 2022/0283720 A1, Sep. 8, 2022
Int. Cl. G06F 12/00 (2006.01); G06F 3/06 (2006.01)
CPC G06F 3/0634 (2013.01) [G06F 3/064 (2013.01); G06F 3/0617 (2013.01); G06F 3/0619 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An operating method of a storage controller which communicates with a host and a plurality of flash memory regions, the method comprising:
receiving a write request for a first flash memory region of the plurality of flash memory regions from the host;
determining the first flash memory region as unavailable, based on a status information set;
generating redirection information indicating that a second flash memory region of the plurality of flash memory regions is selected instead of the first flash memory region;
performing a write operation in the second flash memory region based on the redirection information;
updating status information of the second flash memory region in the status information set based on the write operation;
outputting redirection result information indicating that write data of the write request are processed in the second flash memory region, to the host; and
receiving a read request corresponding to the write data and including information of the second flash memory region from the host
wherein the determining of the first flash memory region as unavailable based on the status information set includes:
determining the first flash memory region as unavailable when a value obtained by subtracting a minimum value of a plurality of average erase counts of the plurality of flash memory regions from an average erase count of the first flash memory region is not smaller than a first threshold value.