US 11,860,550 B2
Multi-metal fill with self-aligned patterning and dielectric with voids
Tai-I Yang, Hsinchu (TW); Wei-Chen Chu, Taichung (TW); Hsiang-Wei Liu, Tainan (TW); Shau-Lin Shue, Hsinchu (TW); Li-Lin Su, Taichung County (TW); and Yung-Hsu Wu, Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 19, 2022, as Appl. No. 17/868,398.
Application 17/868,398 is a division of application No. 16/722,621, filed on Dec. 20, 2019, granted, now 11,422,475.
Application 16/722,621 is a division of application No. 15/586,881, filed on May 4, 2017, granted, now 10,534,273, issued on Jan. 14, 2020.
Claims priority of provisional application 62/433,612, filed on Dec. 13, 2016.
Prior Publication US 2022/0350262 A1, Nov. 3, 2022
Int. Cl. G03F 7/00 (2006.01); H01L 21/768 (2006.01); G03F 7/004 (2006.01); G03F 7/09 (2006.01)
CPC G03F 7/70633 (2013.01) [G03F 7/0035 (2013.01); G03F 7/0043 (2013.01); G03F 7/0047 (2013.01); G03F 7/094 (2013.01); G03F 7/70625 (2013.01); H01L 21/7682 (2013.01); H01L 21/76807 (2013.01); H01L 21/76837 (2013.01); H01L 21/76885 (2013.01); H01L 21/76897 (2013.01); H01L 21/76849 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a first sacrificial structure with a first spacer and a second sacrificial structure with a second spacer on a substrate;
forming an opening in a photoresist layer on the first and second sacrificial structures, wherein the opening is above the first and second spacers, and wherein a width of the opening is greater than a width between the first and second spacers;
removing a portion of the substrate between the first and second spacers to form a via opening;
forming a via structure in the via opening;
removing the first sacrificial structure to form a metal line opening;
forming a metal line in the metal line opening; and
forming, on the metal line, a capping layer with a bottom surface coplanar with a top surface of the first spacer.