CPC G03F 7/70033 (2013.01) [G02B 7/182 (2013.01); G03F 7/7055 (2013.01); H05G 2/006 (2013.01); H05G 2/008 (2013.01)] | 20 Claims |
1. A method of controlling an extreme ultraviolet (EUV) lithography system, the method comprising:
irradiating a target droplet with laser radiation;
guiding a return beam of laser radiation to a metrology device of the EUV lithography system;
determining aberration of the return beam using the metrology device;
determining Zernike coefficients of a Zernike polynomial that corresponds to the aberration; and
determining a change in a beam profile of the return beam based on at least one of Zernike coefficients of the Zernike polynomial.
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