US 11,860,544 B2
Target control in extreme ultraviolet lithography systems using aberration of reflection image
Ting-Ya Cheng, Taipei (TW); Han-Lung Chang, Kaohsiung (TW); Shi-Han Shann, Hsinchu (TW); Li-Jui Chen, Hsinchu (TW); and Yen-Shuo Su, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on May 23, 2022, as Appl. No. 17/751,545.
Application 17/751,545 is a continuation of application No. 16/926,489, filed on Jul. 10, 2020, granted, now 11,340,531, issued on May 24, 2022.
Prior Publication US 2022/0283507 A1, Sep. 8, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/20 (2006.01); G02B 7/182 (2021.01); H05G 2/00 (2006.01); G03F 7/00 (2006.01)
CPC G03F 7/70033 (2013.01) [G02B 7/182 (2013.01); G03F 7/7055 (2013.01); H05G 2/006 (2013.01); H05G 2/008 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of controlling an extreme ultraviolet (EUV) lithography system, the method comprising:
irradiating a target droplet with laser radiation;
guiding a return beam of laser radiation to a metrology device of the EUV lithography system;
determining aberration of the return beam using the metrology device;
determining Zernike coefficients of a Zernike polynomial that corresponds to the aberration; and
determining a change in a beam profile of the return beam based on at least one of Zernike coefficients of the Zernike polynomial.