US 11,860,495 B2
Liquid crystal display device and electronic device
Hajime Kimura, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd.
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Feb. 24, 2023, as Appl. No. 18/113,795.
Application 18/113,795 is a continuation of application No. 17/848,727, filed on Jun. 24, 2022, granted, now 11,592,717.
Application 17/848,727 is a continuation of application No. 17/325,402, filed on May 20, 2021, granted, now 11,372,298, issued on Jun. 28, 2022.
Application 17/325,402 is a continuation of application No. 16/912,911, filed on Jun. 26, 2020, granted, now 11,016,354, issued on May 25, 2021.
Application 16/912,911 is a continuation of application No. 15/823,026, filed on Nov. 27, 2017, granted, now 10,698,277, issued on Jun. 30, 2020.
Application 15/823,026 is a continuation of application No. 14/628,459, filed on Feb. 23, 2015, granted, now 9,829,761, issued on Nov. 28, 2017.
Application 14/628,459 is a continuation of application No. 14/322,999, filed on Jul. 3, 2014, granted, now 8,964,156, issued on Feb. 24, 2015.
Application 14/322,999 is a continuation of application No. 13/409,288, filed on Mar. 1, 2012, granted, now 8,780,307, issued on Jul. 15, 2014.
Application 13/409,288 is a continuation of application No. 12/977,217, filed on Dec. 23, 2010, granted, now 8,130,354, issued on Mar. 6, 2012.
Application 12/977,217 is a continuation of application No. 11/923,128, filed on Oct. 24, 2007, granted, now 7,872,722, issued on Jan. 18, 2011.
Claims priority of application No. 2006-297009 (JP), filed on Oct. 31, 2006.
Prior Publication US 2023/0229047 A1, Jul. 20, 2023
Int. Cl. G02F 1/1362 (2006.01); H01L 27/12 (2006.01); G02F 1/1343 (2006.01); G02F 1/1333 (2006.01); G02F 1/1337 (2006.01); G02F 1/1368 (2006.01); G02F 1/1335 (2006.01); G09G 3/20 (2006.01); G09G 3/36 (2006.01); H04N 9/31 (2006.01); G09G 3/34 (2006.01)
CPC G02F 1/136286 (2013.01) [G02F 1/1337 (2013.01); G02F 1/1362 (2013.01); G02F 1/1368 (2013.01); G02F 1/133345 (2013.01); G02F 1/134363 (2013.01); G02F 1/136277 (2013.01); G09G 3/20 (2013.01); G09G 3/3659 (2013.01); H01L 27/1214 (2013.01); H01L 27/1218 (2013.01); H04N 9/3102 (2013.01); G02F 1/133553 (2013.01); G02F 1/134372 (2021.01); G02F 1/136231 (2021.01); G09G 3/342 (2013.01); G09G 3/3685 (2013.01); G09G 2300/0876 (2013.01); G09G 2310/024 (2013.01); G09G 2310/027 (2013.01); G09G 2310/0235 (2013.01); G09G 2310/0275 (2013.01); G09G 2310/0297 (2013.01); G09G 2320/0233 (2013.01); G09G 2320/0252 (2013.01); G09G 2320/0261 (2013.01); G09G 2320/106 (2013.01); G09G 2340/0435 (2013.01); G09G 2340/16 (2013.01); G09G 2352/00 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a common electrode over a first substrate;
a first conductive layer over the first substrate, the first conductive layer electrically connected to the common electrode;
a semiconductor layer over the first substrate, the semiconductor layer comprising polycrystalline silicon;
a gate wiring, a part of the gate wiring overlapping with the semiconductor layer;
a source wiring, a part of the source wiring being over and in contact with the semiconductor layer;
a second conductive layer over and in contact with the semiconductor layer;
an insulating film over the common electrode, the first conductive layer, and the second conductive layer;
a pixel electrode over the insulating film, the pixel electrode electrically connected to the second conductive layer; and
liquid crystal molecules over the common electrode and the pixel electrode,
wherein the first conductive layer, the source wiring, and the second conductive layer comprise a same material,
wherein the pixel electrode has a plurality of slits,
wherein the part of the gate wiring and a first region of the common electrode overlap with each other, and
wherein the source wiring and a second region of the common electrode overlap with each other.