US 11,860,045 B2
Semiconductor device including temperature sensing circuit
Dahoo Kim, Gyeonggi-do (KR); and Jongchern Lee, Gyeonggi-do (KR)
Assigned to SK HYNIX INC., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Jul. 6, 2020, as Appl. No. 16/921,462.
Claims priority of application No. 10-2019-0150219 (KR), filed on Nov. 21, 2019.
Prior Publication US 2021/0156746 A1, May 27, 2021
Int. Cl. G01K 7/02 (2021.01); G01J 5/00 (2022.01); G01K 3/00 (2006.01); G01R 27/00 (2006.01); G01R 31/26 (2020.01); G01R 31/28 (2006.01); G01R 31/00 (2006.01)
CPC G01K 7/021 (2013.01) [G01J 5/0007 (2013.01); G01K 3/005 (2013.01); G01R 27/00 (2013.01); G01R 31/26 (2013.01); G01R 31/2607 (2013.01); G01R 31/2851 (2013.01); G01R 31/2874 (2013.01); G01R 31/00 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a control signal generation circuit having a plurality of signal shifting stages connected in series, the control signal generation circuit configured a) to sequentially shift a single test mode signal in response to a toggling of a clock signal, and b) to sequentially generate a plurality of control signals for controlling a plurality of temperature sensing circuits, using at least one sequentially shifted test mode signal obtained from a preceding stage of the plurality of signal shifting stages; and
the plurality of temperature sensing circuits each including a first resistor having a resistance that varies depending on temperature and configured to receive the plurality of control signals and generate a temperature sensing signal based on the resistance in response to a corresponding control signal of the plurality of control signals.