CPC G01J 1/44 (2013.01) [H03K 17/6872 (2013.01); G01J 2001/4466 (2013.01)] | 27 Claims |
1. A photodetector comprising:
at least one avalanche photodiode (APD) including a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type;
a first transistor connected to the first semiconductor layer and including a channel of the second conductivity type that has polarity opposite to polarity of the first conductivity type; and
a second transistor connected to the first semiconductor layer and including a channel of the first conductivity type.
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