US 11,860,033 B2
Photodetector, photodetector array, and drive method comprising a second transistor including a channel of first conductivity type and a first transistor including a channel of second conductivity type that has polarity opposite to polarity of the first conductivity type
Akito Inoue, Osaka (JP); Mitsuyoshi Mori, Kyoto (JP); Yusuke Sakata, Osaka (JP); and Motonori Ishii, Osaka (JP)
Assigned to PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD., Osaka (JP)
Filed by Panasonic Intellectual Property Management Co., Ltd., Osaka (JP)
Filed on Feb. 17, 2023, as Appl. No. 18/111,131.
Application 18/111,131 is a continuation of application No. PCT/JP2021/030324, filed on Aug. 19, 2021.
Claims priority of application No. 2020-164097 (JP), filed on Sep. 29, 2020.
Prior Publication US 2023/0204415 A1, Jun. 29, 2023
Int. Cl. H01L 31/107 (2006.01); G01J 1/44 (2006.01); H03K 17/687 (2006.01)
CPC G01J 1/44 (2013.01) [H03K 17/6872 (2013.01); G01J 2001/4466 (2013.01)] 27 Claims
OG exemplary drawing
 
1. A photodetector comprising:
at least one avalanche photodiode (APD) including a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type;
a first transistor connected to the first semiconductor layer and including a channel of the second conductivity type that has polarity opposite to polarity of the first conductivity type; and
a second transistor connected to the first semiconductor layer and including a channel of the first conductivity type.