US 11,859,313 B2
8-inch SiC single crystal substrate
Tomohiro Shonai, Tokyo (JP)
Assigned to Resonac Corporation, Tokyo (JP)
Filed by Resonac Corporation, Tokyo (JP)
Filed on May 31, 2023, as Appl. No. 18/203,804.
Claims priority of application No. 2022-090464 (JP), filed on Jun. 2, 2022.
Prior Publication US 2023/0392293 A1, Dec. 7, 2023
Int. Cl. H01L 29/16 (2006.01); C30B 33/08 (2006.01); C30B 23/02 (2006.01); C30B 29/36 (2006.01)
CPC C30B 33/08 (2013.01) [C30B 23/02 (2013.01); C30B 29/36 (2013.01); H01L 29/1608 (2013.01)] 14 Claims
OG exemplary drawing
 
1. An 8-inch SiC single crystal substrate, wherein the diameter is in a range of 195 mm to 205 mm, the thickness is in a range of 300 μm to 650 μm, SORI is 50 μm or less, and the in-plane variation of the thickness of the substrate, which is the difference between the maximum and minimum substrate thickness at the center of the substrate and four points on the circumference of a circle having a radius half the radius of the substrate, is 1.5 μm or less.