US 11,859,309 B2
Chemical-vapor-deposition silicon carbide bulk having improved etching characteristic
Hak Jun Ahn, Seongnam-si (KR); Young Ju Kim, Wonju-si (KR); Youn Woong Jung, Wonju-si (KR); Kang Suk Kim, Cheongju-si (KR); Jun Baek Song, Wonju-si (KR); and Won Geun Son, Wonju-si (KR)
Assigned to DS TECHNO CO., LTD., Gwangju-si (KR)
Appl. No. 16/479,551
Filed by DS TECHNO CO., LTD., Gwangju-si (KR)
PCT Filed May 22, 2019, PCT No. PCT/KR2019/006141
§ 371(c)(1), (2) Date Jul. 19, 2019,
PCT Pub. No. WO2019/231164, PCT Pub. Date Dec. 5, 2019.
Claims priority of application No. 10-2018-0063247 (KR), filed on Jun. 1, 2018; and application No. 10-2018-0151142 (KR), filed on Nov. 29, 2018.
Prior Publication US 2021/0355603 A1, Nov. 18, 2021
Int. Cl. C30B 29/36 (2006.01); C23C 16/32 (2006.01); C30B 25/02 (2006.01); H01L 21/02 (2006.01); C01B 32/977 (2017.01); C01B 32/956 (2017.01)
CPC C30B 29/36 (2013.01) [C01B 32/977 (2017.08); C23C 16/325 (2013.01); C30B 25/02 (2013.01); H01L 21/0262 (2013.01); H01L 21/02529 (2013.01); C01B 32/956 (2017.08); H01L 21/02274 (2013.01)] 3 Claims
OG exemplary drawing
 
1. A chemical-vapor-deposition silicon carbide (SIC) bulk having an improved etching characteristic, comprising:
silicon carbide (SIC) manufactured by a chemical vapor deposition method using MTS (met yltrichlorosilane), hydrogen (H2), and nitrogen (N2) gases,
wherein the SIC manufactured by the chemical vapor deposition method is β-SiC (3C-SiC), 6H-SiC is present in the SIC manufactured by the chemical vapor deposition method, five peaks having a reference code of 03-065-0360 and at least one peak having a reference code of 00-049-1428 are confirmed to be present from XRD analysis of the silicon carbide bulk, and a nitrogen concentration value is 4.0×1018 atoms/cm3 or more at a depth of 1,500 nm or more from a surface of the bulk, which is a metastable layer,
wherein comb patterns are formed in grains of the carbide bulk,
wherein an area ratio of comb patterns in grains of the bulk is 50% or more.