CPC C30B 29/36 (2013.01) [C01B 32/977 (2017.08); C23C 16/325 (2013.01); C30B 25/02 (2013.01); H01L 21/0262 (2013.01); H01L 21/02529 (2013.01); C01B 32/956 (2017.08); H01L 21/02274 (2013.01)] | 3 Claims |
1. A chemical-vapor-deposition silicon carbide (SIC) bulk having an improved etching characteristic, comprising:
silicon carbide (SIC) manufactured by a chemical vapor deposition method using MTS (met yltrichlorosilane), hydrogen (H2), and nitrogen (N2) gases,
wherein the SIC manufactured by the chemical vapor deposition method is β-SiC (3C-SiC), 6H-SiC is present in the SIC manufactured by the chemical vapor deposition method, five peaks having a reference code of 03-065-0360 and at least one peak having a reference code of 00-049-1428 are confirmed to be present from XRD analysis of the silicon carbide bulk, and a nitrogen concentration value is 4.0×1018 atoms/cm3 or more at a depth of 1,500 nm or more from a surface of the bulk, which is a metastable layer,
wherein comb patterns are formed in grains of the carbide bulk,
wherein an area ratio of comb patterns in grains of the bulk is 50% or more.
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