	US 11,859,280 B2
	Substrate processing apparatus and method of manufacturing semiconductor device
Hidetoshi Mimura, Toyama (JP); Takafumi Sasaki, Toyama (JP); Hidenari Yoshida, Toyama (JP); and Yusaku Okajima, Toyama (JP)
Assigned to KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Aug. 22, 2022, as Appl. No. 17/892,423.
Application 17/892,423 is a continuation of application No. 16/518,479, filed on Jul. 22, 2019, granted, now 11,453,942.
Application 16/518,479 is a continuation of application No. PCT/JP2017/034051, filed on Sep. 21, 2017.
Claims priority of application No. 2017-032065 (JP), filed on Feb. 23, 2017.
Prior Publication US 2022/0403510 A1, Dec. 22, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/40 (2006.01); C23C 16/44 (2006.01); C23C 16/34 (2006.01); C23C 16/52 (2006.01); H01L 21/02 (2006.01)

CPC C23C 16/4412 (2013.01) [C23C 16/345 (2013.01); C23C 16/52 (2013.01); H01L 21/0217 (2013.01)]

14 Claims

1. A substrate processing apparatus comprising: a process vessel in which a substrate is processed; two process gas nozzles arranged substantially in parallel with a gap therebetween configured to supply a process gas into the process vessel; a first inert gas nozzle and a second inert gas nozzle fluidly coupled to an inert gas supply, the first and second inert gas nozzles provided respectively in two regions divided by a first straight line passing through a center of the two process gas nozzles and a center of the substrate, and configured to supply an inert gas into the process vessel, wherein an angle between the first straight line and a second straight line extending from the center of the substrate to each of the first and second inert gas nozzles is within a range from 90 to 180 degrees; an exhaust port provided at the process vessel and configured to exhaust an inner atmosphere of the process vessel; and a controller configured to a first flow rate of the inert gas through the first inert gas nozzle and a second flow rate of the inert gas through the second inert gas nozzle.