CPC C04B 35/52 (2013.01) [B01J 3/06 (2013.01); B01J 3/062 (2013.01); B23B 27/14 (2013.01); B23B 27/20 (2013.01); C01B 32/205 (2017.08); C01B 32/25 (2017.08); C04B 35/528 (2013.01); C04B 41/87 (2013.01); C23C 16/26 (2013.01); C25B 11/043 (2021.01); C30B 29/04 (2013.01); B01J 2203/061 (2013.01); B01J 2203/0655 (2013.01); C04B 2235/421 (2013.01); C04B 2235/427 (2013.01); C04B 2235/781 (2013.01); C04B 2235/963 (2013.01)] | 34 Claims |
1. Polycrystalline diamond having a diamond single phase as basic composition, wherein
the polycrystalline diamond includes a plurality of crystal grains,
the polycrystalline diamond contains boron, hydrogen, oxygen, and a remainder containing carbon and trace impurities,
the boron is dispersed in the crystal grains at an atomic level, and greater than or equal to 90 atomic % of the boron is present in an isolated substitutional type,
the hydrogen and the oxygen are present in an isolated substitutional type or an interstitial type in the crystal grains,
each of the crystal grains has a grain size of less than or equal to 500 nm, and
the polycrystalline diamond has a surface covered with a protective film,
wherein the protective film is a graphene nanoribbon film.
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