US 11,858,813 B2
Systems and methods for high yield and high throughput production of graphene
Vig Sherrill, Kingston, TN (US); Mira Baraket, Oak Ridge, TN (US); and Richard Philpott, Cambridge (GB)
Assigned to General Graphene Corporation, Knoxville, TN (US)
Filed by General Graphene Corporation, Knoxville, TN (US)
Filed on Dec. 6, 2022, as Appl. No. 18/075,509.
Application 18/075,509 is a continuation of application No. 18/075,485, filed on Dec. 6, 2022.
Application 18/075,485 is a continuation of application No. 18/075,479, filed on Dec. 6, 2022, granted, now 11,718,527.
Application 18/075,479 is a continuation of application No. 18/008,457, granted, now 11,718,526, previously published as PCT/US2022/035043, filed on Jun. 27, 2022.
Claims priority of provisional application 63/292,533, filed on Dec. 22, 2021.
Prior Publication US 2023/0212011 A1, Jul. 6, 2023
Int. Cl. C01B 32/182 (2017.01); C23C 16/02 (2006.01); C23C 16/26 (2006.01); C01B 32/186 (2017.01); C01B 32/184 (2017.01); B01J 19/24 (2006.01); C01B 32/05 (2017.01); B01J 19/18 (2006.01); B82Y 40/00 (2011.01)
CPC C01B 32/182 (2017.08) [B01J 19/18 (2013.01); B01J 19/245 (2013.01); C01B 32/05 (2017.08); C01B 32/184 (2017.08); C01B 32/186 (2017.08); C23C 16/0209 (2013.01); C23C 16/26 (2013.01); B82Y 40/00 (2013.01); C01B 2204/02 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method for forming graphene, said method comprising:
disposing, on a laterally extending substrate holder, a laterally extending substrate sheet having located thereon a first surface for processing and a second surface for processing, wherein said second surface for processing is located a positive lateral distance from said first surface for processing;
scavenging, in presence of a substrate gas scavenging composition in one or more infeed tunnels disposed adjacent to said substrate holder, a substrate gas present in and around said first surface for processing to produce a substrate gas depleted surface; and
annealing, in presence of an annealing gas composition and at an annealing temperature in one or more processing sub-enclosures disposed laterally adjacent to said one or more infeed tunnels, said second surface for processing to produce an annealed surface, wherein said annealing temperature is produced using one or more heat sources being disposed adjacent to said second surface for processing, and
wherein some of said heat, resulting from said annealing temperature and said annealing gas composition, flows from said one or more processing sub-enclosures towards said first surface for processing and facilitates production of said substrate gas depleted surface in said one or more infeed tunnels.