US 10,172,231 B2
Methods and apparatus for reducing RF crossover coupling
Gregory Louis Horvath, Scotts Valley, CA (US); and Peter Bacon, Derry, NH (US)
Assigned to pSemi Corporation, San Diego, CA (US)
Filed by pSemi Corporation, San Diego, CA (US)
Filed on Jun. 8, 2016, as Appl. No. 15/176,940.
Prior Publication US 2017/0359056 A1, Dec. 14, 2017
Int. Cl. H05K 1/02 (2006.01); H01P 3/00 (2006.01); H01P 1/12 (2006.01); H04B 1/48 (2006.01)
CPC H05K 1/0228 (2013.01) [H01P 1/127 (2013.01); H01P 3/003 (2013.01); H04B 1/48 (2013.01); H05K 1/0216 (2013.01)] 27 Claims
OG exemplary drawing
 
15. An integrated circuit comprising:
a first non-conductive layer;
a first metal layer overlying the first non-conductive layer, the first metal layer comprising:
i) a ground return region of a substantially symmetrical shape with respect to a centerline of the ground return region, isolated from a remaining portion of the first metal layer;
ii) a first transmission line of a substantially symmetrical shape with respect to the centerline, formed within the ground return region, separated from the ground return region by a fixed distance gap along a length of the first transmission line; and
iii) a second transmission line of a substantially symmetrical shape with respect to the centerline, formed within the ground return region, the second transmission line comprising a first segment and a last segment collinear with the first segment, the first segment and the last segment separated from the ground return region by the fixed distance gap along the length of the first and last segments, the first segment and the last segment separated from one another at a middle region of the second transmission line;
a second non-conductive layer overlying the first metal layer; and
a second metal layer comprising a middle segment of the second transmission linecollinear with the first and last segments and electrically connected to the first and last segments through vias formed in the second non-conductive layer,
wherein:
the first transmission line and the second transmission line cross at the middle region of the second transmission line to form a symmetrical crossing pattern with respect to the centerline, and
the integrated circuit further comprises:
a third non-conductive layer overlying the first metal layer and separating the first metal layer and the second non-conductive layer; and
a third metal layer overlying the third non-conductive layer and separating the third non-conductive layer and the second non-conductive layer, the third metal layer comprising a ground shield region isolated from a remaining portion of the third metal layer, the ground shield region having a symmetrical geometry with respect to the centerline of the ground return region, the ground shield region comprising:
a) a center region comprising two crossing lines crossing at the centerline of the ground return region, the crossing lines defining a symmetrical crossing pattern of the center region comprising four extremes away from the centerline; and
b) four regions of a substantially same geometry each connected to one of the four extremes of the symmetrical crossing pattern of the center region, wherein:
the four regions are electrically connected to the ground return region through vias formed in the third non-conductive layer, and
projection of each of the four regions onto the ground return region clears regions of the first and the second transmission lines and corresponding fixed distance gap regions.